Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type

被引：11
|
作者：
Yakimov, AI [1 ]
Dvurechenskii, AV [1 ]
Nikiforov, AI [1 ]
Pchelyakov, OP [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
来源：
JETP LETTERS | 2000年 / 72卷 / 04期
关键词：
73.20.Mf; 73.50.Pz;
D O I：
10.1134/1.1320109
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It was found that irradiating an array of Ge nanoclusters in n-Si with light that induced interband transitions gave rise to negative photoconductivity. This result was explained by localization of equilibrium electrons at the Si/Ge interface in the potential of the nonequilibrium holes trapped on deep states in Ge islands. (C) 2000 MAIK "Nauka/ Interperiodica".
引用
收藏
页码：186 / 189
页数：4
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