Resistive switching in a LaMnO3+δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy

被引：13
|
作者：
Meunier, Benjamin [1 ]
Martinez, Eugenie [2 ]
Rodriguez-Lamas, Raquel [1 ]
Pla, Dolors [1 ]
Burriel, Monica [1 ]
Boudard, Michel [1 ]
Jimenez, Carmen [1 ]
Rueff, Jean-Pascal [3 ,4 ]
Renault, Olivier [2 ]
机构：
[1] Univ Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble, France
[2] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
[3] Synchrotron SOLEIL, BP 48, F-91192 Gif Sur Yvette, France
[4] Sorbonne Univ, CNRS, LCPMR, F-75005 Paris, France
来源：
JOURNAL OF APPLIED PHYSICS | 2019年 / 126卷 / 22期
关键词：
BURIED INTERFACES; XPS; QUANTIFICATION; RESISTANCE; MANGANITE; SURFACE; HAXPES; OXIDES; BULK;
D O I：
10.1063/1.5125420
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transition metal oxides are promising candidates in the development of valence change memories thanks to their ability to present the valence change mechanism. The resistive switching mechanism of TiN/LaMnO3 + delta (LMO)/Pt devices was investigated by operando hard X-ray photoelectron spectroscopy after careful in situ electrical characterization. The results presented here highlight the oxygen exchange process at the TiN/LMO interface. The active TiN top electrode acts as an oxygen getter, pumping O2- anions that are attracted by the positive bias and repelling them under negative bias. This drift of charged defects is correlated with variations of the interfacial resistance. Our results confirm the critical role of the TiN/LMO interface and oxygen drift in the resistive switching behavior of such devices. Published under license by AIP Publishing.
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页数：5
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