Analytical model for dc characteristics and small-signal parameters of AlGaN/GaN modulation-doped field-effect transistor for microwave circuit applications

被引：0

作者：

Rashmi

Agrawal, A

Sen, S

Haldar, S

Gupta, RS

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India

[2] Acharya Narendra Dev Coll, Dept Elect, New Delhi 110019, India

[3] Moti Lal Nehru Coll, Dept Phys, New Delhi 110021, India

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2000年 / 27卷 / 06期

关键词：

AlGaN/GnN MODFET; transconductance; drain conductance; cutoff frequency;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved charge-control, model for the dc and microwave characteristics of an Al0.15Ga0.85N/GaN modulation-doped FET (MODFET) is developed. The effect of pisoelectric polarization-induced charge at the AlGaN/GaN heterointerface has been incorporated. The small-signal microwave parameters have been evaluated to determine the current-gain cutoff frequency (f(t)). High current levels (503.4 mA/mm), large g(m), (160 mS/mm), and high f(t) (9.45 GHz) are achieved for a 1 mum Al0.15Ga0.85N/GaN MODFET. The results so obtained nle in close agreement with experimental data. (C) 2000 John Wiley & Sons, Inc.

引用

页码：413 / 419

页数：7

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