Spintronics and exchange engineering in coupled quantum dots

被引:2
|
作者
Leburton, JP
Nagaraja, S
Matagne, P
Martin, RM
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
关键词
spintronics; coupled quantum dots; nanostructures;
D O I
10.1016/S0026-2692(03)00080-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By combining advanced device modeling with computational physics, microscopic changes in quantum many-body interactions of quantum dots are described as a function of macroscopic device parameters without a priori assumption on the confining potential. In planar coupled quantum dot structures, spin control can be achieved by modulating exchange interaction with an external gate as in conventional field effect transistors. These new features, coupled with recent advances in quantum dot physics constitute the basic ingredients for a solid state technology for quantum information processing. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:485 / 489
页数:5
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