L-band High-Power GaN-on-Si HEMT Amplifier

被引：0
|
作者：
Gryglewski, Daniel [1 ]
Wisniewski, Marcin [1 ]
Wojtasiak, Wojciech [1 ]
机构：
[1] Warsaw Univ Technol, Inst Radiolectron & Multimedia Technol, Warsaw, Poland
来源：
2020 23RD INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2020) | 2020年
关键词：
GaN HEMT; Si substrate; microwave power amplifier; thermal impedance;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In the paper RF performances and thermal features of GaN HEMTs grown on Si substrate for the design of microwave high-power amplifiers have been briefly presented referring also to the state of the art of the dominant GaN-on-SiC HEMT technology. As GaN-on-Si HEMT application examples driver and final stage amplifiers with high-voltage NPT2018 and NPT2022 transistors made by MACOM were designed and experimentally verified. The amplifiers operate over a 1.2 GHz to 1.4 GHz frequency range with saturated output power nearly 42 dBm and 51 dBm, respectively, at the power added efficiency more than 60%.
引用
收藏
页码：411 / 415
页数：5
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