A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

被引：9
|
作者：
Ahn, Song-Yi [1 ]
Park, Kyung [2 ]
Choi, Daehwan [3 ]
Park, Jozeph [4 ]
Kim, Yong Joo [5 ]
Kim, Hyun-Suk [1 ]
机构：
[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Daejeon 34134, South Korea
[2] WONIK IPS, Semicond Proc Lab, Gyeonggi Do 17709, South Korea
[3] Yonsei Univ, Sch Integrated Technol, Incheon 21983, South Korea
[4] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
[5] Chungnam Natl Univ, Biosyst Machinery Engn, Daejeon 34134, South Korea
来源：
ELECTRONICS | 2019年 / 8卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
nitrogen incorporation; CuON; p-type oxide semiconductor; reactive sputtering; thin-film transistors; P-TYPE CUO; FILM;
D O I：
10.3390/electronics8101099
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.
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页数：11
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