Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV

被引：39
|
作者：
Chen, Chih-Han [2 ]
Chang, Shoou-Jinn [2 ,3 ]
Chang, Sheng-Po [2 ,3 ]
Tsai, Yao-Ching [1 ]
Chen, I-Cherng [4 ]
Hsueh, Ting-Jen [5 ]
Hsu, Cheng-Liang [1 ]
机构：
[1] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[3] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[4] Microsyst Technol Ctr, Ind Technol Res Inst S, Tainan 709, Taiwan
[5] Natl Nanodevice Labs, Tainan 741, Taiwan
来源：
CHEMICAL PHYSICS LETTERS | 2010年 / 490卷 / 4-6期
关键词：
D O I：
10.1016/j.cplett.2010.03.033
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Vertical zinc oxide nanowires, used as electron emitters, were synthesized on ZnO:Ga/glass substrate by a vapor-liquid-solid process without a catalyst. The nanowires, 5 mu m long and 50-250 nm in diameter, were grown with a preferred (0 0 2) orientation and a small XRD full-width at half-maximum intensity. Illumination of ZnO nanowires by UV improved their field emission attributes, reducing their turn-on electric field to 2.1 V/mu m at a current density of 1 mu A/cm(2). This phenomenon is attributed to the generation of a large number of hole-electron pairs by UV illumination. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：176 / 179
页数：4
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