Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage > 1 kV

被引：253
|
作者：
Hu, Zongyang [1 ]
Nomoto, Kazuki [1 ]
Li, Wenshen [1 ]
Tanen, Nicholas [2 ]
Sasaki, Kohei [3 ]
Kuramata, Akito [3 ]
Nakamura, Tohru [4 ]
Jena, Debdeep [5 ]
Xing, Huili Grace [5 ]
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[3] Novel Crystal Technol Inc, Sayama, Osaka 3501328, Japan
[4] Hosei Univ, Ctr Micronano Technol, Tokyo 1840003, Japan
[5] Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Sch Elect & Comp Engn, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 06期
关键词：
beta-Ga2O3; HVPE; breakdown voltage; MISFET; MOSFET; FinFET; enhancement mode; vertical transistor; power electronics;
D O I：
10.1109/LED.2018.2830184
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-voltage vertical Ga2O3 MISFETs are developed employing halide vapor phase epitaxial (HVPE) layers on bulk Ga2O3 (001) substrates. The low charge concentration of similar to 10(16) cm(-3) in the n-drift region allows three terminal breakdown voltages to reach up to 1057 V without field plates. The devices operate in the enhancement mode (E-mode) with a threshold voltage of similar to 1.2-2.2V, a current on/off ratio of similar to 108, an on resistance of similar to 13-18m Omega.m(2), and an output current of > 300 A/cm(2). This is the first report of high-voltage vertical Ga2O3 transistors with E-mode operation, a significant milestone toward realizing Ga2O3 based power electronics.
引用
收藏
页码：869 / 872
页数：4
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