Bi incorporation in GaSbBi films grown by liquid phase epitaxy

被引：0

作者：

Das, S. K. ^{[1
]}

Das, T. D. ^{[1
]}

Dhar, S. ^{[1
]}

机构：

[1] Univ Calcutta, Dept Elect Sci, Kolkata 700009, W Bengal, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

Dilute Bismide; LPE; Optical absorption; BAND-GAP; GAAS1-XBIX;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present here the Bi incorporation properties of GaSbBi layers grown by liquid phase epitaxy technique. Secondary ion mass spectroscopy technique indicates that Bi is distributed uniformly along the depth of the layer with slowly decreasing concentration away from the surface. Room temperature optical absorption measurements show a band gap lowering of 25 meV for a layer grown from a melt containing 1 at% Bi.

引用

页码：847 / 848

页数：2

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