Physical models of ultra-thin oxide reliability and implications for CMOS circuits

被引：0

作者：

Stathis, JH ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 | 2002年 / 2002卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extensive review article on the physics of oxide breakdown has recently been published (1, 2). This manuscript gives a brief summary and an update with some further comments on the subject.

引用

页码：458 / 464

页数：7

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