Physical models of ultra-thin oxide reliability and implications for CMOS circuits

被引：0
|
作者：
Stathis, JH [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 | 2002年 / 2002卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An extensive review article on the physics of oxide breakdown has recently been published (1, 2). This manuscript gives a brief summary and an update with some further comments on the subject.
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收藏
页码：458 / 464
页数：7
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