UV Enhanced Emission Performance of Low Temperature Grown Ga-Doped ZnO Nanorods

被引：25
|
作者：
Chang, Shoou-Jinn [1 ,2 ]
Duan, Bi-Gui [1 ,2 ]
Hsiao, Chih-Hung [1 ,2 ]
Liu, Chung-Wei [1 ,2 ]
Young, Sheng-Joue [3 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[3] Natl Formosa Univ, Dept Elect Engn, Yunlin 632, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2014年 / 26卷 / 01期
关键词：
GZO nanorod; field emitters; hydrothermal; NANOWIRES;
D O I：
10.1109/LPT.2013.2289322
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on hydrothermal growth and gallium doping of ZnO (GZO) nanorods for field emitters. The GZO nanorods grown at 90 degrees C were structurally uniform and well oriented with pure wurtzite structure. It was also found that turn-on fields were 5.4 and 3.6 V/mu m while field-enhancement factors beta were 1711 and 9058, for the ZnO nanorods and GZO nanorods grown at 90 degrees C, respectively. In addition, the turn-on electrical field was reduced from 3.6 to 3.15 V/mu m and beta of GZO nanorods was enhanced from 9058 to 13529 by UV illumination.
引用
收藏
页码：66 / 69
页数：4
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