Stark effect in the magneto-exciton energy in GaAs/AlxGa1-xAs double quantum wells

被引：4
|
作者：
Ferreira, EC
Da Costa, JAP
Freire, JAK [1 ]
机构：
[1] Univ Fed Rio Grande Norte, Dept Fis, BR-59072970 Natal, RN, Brazil
[2] Univ Fed Ceara, Ctr Ciencias Exatas, Dept Fis, BR-60455900 Fortaleza, Ceara, Brazil
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
magneto-exciton; gradual interfaces;
D O I：
10.1016/S1386-9477(02)00798-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We calculated the exciton binding energy and energy levels in GaAs/Al0.3Ga0.7As DQWs with non-abrupt interfaces, taking into account the electric and magnetic field effects. Numerical results for GaAs/Al0.3Ga0.7As double quantum wells show an enhancement of the e-hh exciton energy by as much as 50 meV with respect to the abrupt well system (50 Angstrom wide) when a 10 Angstrom interface is considered. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：222 / 224
页数：3
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