Sudden nucleation versus scale invariance of InAs quantum dots on GaAs

被引:29
|
作者
Fanfoni, M.
Placidi, E.
Arciprete, F.
Orsini, E.
Patella, F.
Balzarotti, A.
机构
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[2] INFM, CNR, I-00133 Rome, Italy
来源
PHYSICAL REVIEW B | 2007年 / 75卷 / 24期
关键词
D O I
10.1103/PhysRevB.75.245312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
InAs quantum dots (QDs) self-assembled on GaAs(001) at the early stage of growth show scale invariance of the island size distribution, which have been interpreted in the framework of the Mulheran and Blackman theory. The central concept is the capture zone of the growing nucleus properly identified by the Voronoi' cells. We show that the volume distribution of the quantum dots well overlaps the area distribution of the associated Voronoi' cells determined experimentally. Moreover, we evidence that scale invariance takes place in a restricted range of coverage and, basically, thanks to a very fast nucleation process. By comparison between experimental data and numerical simulations of the growth, we determine the spatial correlation length among QDs. The key conditions for scale invariance to occur are pointed out, thus defining the range of validity of the model for application to other systems.
引用
收藏
页数:4
相关论文
共 50 条
  • [31] Strain distribution and electronic structure of InAs quantum dots on GaAs: Atomic scale calculations
    Saito, T
    Schulman, JN
    Arakawa, Y
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1997, 12 : 19 - 25
  • [32] Evolution of InAs/GaAs quantum dots morphology with different InAs supply
    Zhao, Zhen
    Zhou, Haiyue
    Guo, Xiang
    Luo, Zijiang
    Wang, Jihong
    Wang, Yi
    Wei, Wenzhe
    Ding, Zhao
    Gongneng Cailiao/Journal of Functional Materials, 2015, 46 (23): : 23025 - 23030
  • [33] Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage
    Wang, XQ
    Du, GT
    Jin, Z
    Li, MT
    Yin, JZ
    Li, ZT
    Liu, SY
    Yang, SR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (05): : 2523 - 2526
  • [34] Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots
    Latini, V.
    Placidi, E.
    Arciprete, F.
    Tisbi, E.
    Patella, F.
    Magri, R.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (12)
  • [35] Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots
    Howe, P
    Le Ru, EC
    Clarke, E
    Abbey, B
    Murray, R
    Jones, TS
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (06) : 2998 - 3004
  • [36] Natural quantum dots in the InAs/GaAs wetting layer
    Babinski, A.
    Borysiuk, J.
    Kret, S.
    Czyz, M.
    Golnik, A.
    Raymond, S.
    Wasilewski, Z. R.
    APPLIED PHYSICS LETTERS, 2008, 92 (17)
  • [37] The structure of uncapped and capped InAs/GaAs quantum dots
    Zhi, D
    Pashley, DW
    Joyce, BA
    Jones, TS
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 89 - 92
  • [38] InAs quantum dots in GaAs - Technology and luminescence properties
    Hulicius, E
    Oswald, J
    Pangrac, J
    Melichar, K
    Simecek, T
    Janda, P
    HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 207 - 210
  • [39] The atomic structure of InAs quantum dots on GaAs(112)A
    Suzuki, T
    Temko, Y
    Xu, MC
    Jacobi, K
    SURFACE SCIENCE, 2005, 595 (1-3) : 194 - 202
  • [40] Hot carrier relaxation in InAs/GaAs quantum dots
    Photonic Mat. and Devices Laboratory, University of Southern California, Los Angeles, CA 90089-0241, United States
    不详
    不详
    Phys E, 1-4 (578-582):