Evaluation of Pb(Zr,Ti)O3 films derived from propylene-glycol-based sol-gel solutions

被引:23
|
作者
Maki, K
Soyama, N
Mori, S
Ogi, K
机构
[1] Mitsubishi Mat Corp, Dev Sect, Sanda Plant, Sanda, Hyogo 6991339, Japan
[2] Mitsubishi Mat Corp, Cent Res Inst, Omiya, Saitama 3308508, Japan
关键词
PZT; propylene glycol; diol; sol-gel; films; ferroelectric;
D O I
10.1143/JJAP.39.5421
中图分类号
O59 [应用物理学];
学科分类号
摘要
Crack-free PbZr0.52Ti0.48O3 (PZT) films up to almost 1 mum thick have been prepared on Pt/Ti/SiO2/Si substrates from stable propylene-glycol (diol)-based sol-gel solutions by a single coating. We have studied the film thickness dependence of various properties such as microstructure, crystal orientation, ferroelectric properties, and leakage current density for the PZT single-coated films. It was found that the 0.22-mum-thick PZT single-coated film was a dense film with (111)-orientation and exhibited good ferroelectric properties. In order to thicken the PZT dense film, we have studied a sol-gel technique involving multiple coatings of 0.22-mum-thick layers. Finally, the 0.66- and 1.10-mum-thick PZT multicoated films have been prepared on platinized silicon substrates by three and five coatings of 0.22-mum-thick layers. Various properties of the multicoated films have also been evaluated.
引用
收藏
页码:5421 / 5425
页数:5
相关论文
共 50 条
  • [31] Effect of processing conditions on the piezoelectric properties of sol-gel derived Pb(Zr,Ti)O3 films for micromechanical applications
    Pérez, J
    Vilarinho, PM
    Kholkin, AL
    Herrero, JM
    Zaldo, C
    JOURNAL OF MATERIALS RESEARCH, 2005, 20 (06) : 1428 - 1435
  • [32] Ferroelectric properties of Pb(Zr,Ti)O3 films fabricated using a modified sol-gel based process
    Park, Sang-Man
    Lee, Sung-Gap
    Yun, Sang-Eun
    THIN SOLID FILMS, 2008, 516 (16) : 5282 - 5286
  • [33] Surface decoration for sol-gel derived ferroelectric Pb(Zr0.52Ti0.48)O3 thin films
    Wang, XS
    Ishiwara, H
    ASIAN CERAMIC SCIENCE FOR ELECTRONICS II AND ELECTROCERAMICS IN JAPAN V, PROCEEDINGS, 2002, 228-2 : 57 - 61
  • [34] Sol-gel derived Pb(Zr0.53Ti0.47)O3 thin films on BaPbO3 electrode
    Liang, CS
    Wu, JM
    INTEGRATED FERROELECTRICS, 2004, 64 : 191 - 200
  • [35] Preparation and evaluation of sub-100 nm Pb(Zr,Ti)O3 films derived from modified sol-gel solutions for low-voltage operation of feram
    Maki, K
    Soyama, N
    Nagamine, K
    Mori, S
    Ogi, K
    INTEGRATED FERROELECTRICS, 2001, 39 (1-4) : 1173 - 1180
  • [36] Preparation of (Pb,La)(Zr,Ti)O3 epitaxial thin films by modified sol-gel method and their crystallinity evaluation
    Echizen, Masahiro
    Nishida, Takashi
    Nozaka, Takashi
    Takeda, Hiroaki
    Uchiyama, Kiyoshi
    Shiosaki, Tadashi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10B): : 6933 - 6937
  • [37] Properties of Pb(Zr0.92Ti0.08)O3 thin films deposited by sol-gel
    Pintilie, L
    Boerasu, I
    Gomes, M
    Pereira, M
    THIN SOLID FILMS, 2004, 458 (1-2) : 114 - 120
  • [38] Deposition and characterization of Pb(Zr, Ti)O3 sol-gel thin films for piezoelectric cantilever beams
    Liu, Mengwei
    Wang, Jing
    Wang, Liding
    Cui, Tianhong
    SMART MATERIALS AND STRUCTURES, 2007, 16 (01) : 93 - 99
  • [39] Preparation on the [(Pb,La) (Zr,Ti)O3] ferroelectric thin films by using the Sol-Gel processing
    Yan, Peiyu
    Cai, Qijiang
    Li, Longtu
    Zhang, Xiaowen
    Yadian Yu Shengguang/Piezoelectrics and Acoustooptics, 1995, 17 (05): : 24 - 27
  • [40] Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O3 sol-gel derived thin films
    Keith G. Brooks
    Radosveta D. Klissurska
    Pedro Moeckli
    N. Setter
    Journal of Materials Research, 1997, 12 : 531 - 540