Characterization of Oxide Traps Leading to RTN in High-k and Metal Gate MOSFETs

被引：0
|
作者：
Lee, Sanghoon [1 ]
Cho, Heung-Jae [1 ]
Son, Younghwan [1 ]
Lee, Dong Seup [1 ]
Shin, Hyungcheol [1 ]
机构：
[1] Seoul Natl Univ, ISRC, San 56-1,Shinlim Dong, Seoul 151742, South Korea
来源：
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We proposed a new method for characterization of oxide traps leading to Random Telegraph Noise (RTN) in high-k and metal gate MOSFETs considering their energy band structure. Through this method and drain and gate current RTN measurement, we extracted positions, energy levels and activation energies of oxide traps in high-k dielectric as well as in interfacial layer.
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页码：713 / +
页数：2
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