Bandwidth engineering of photonic crystal waveguide bends

被引：20
|
作者：
Borel, PI
Frandsen, LH
Harpoth, A
Leon, JB
Liu, H
Kristensen, M
Bogaerts, W
Dumon, P
Baets, R
Wiaux, V
Wouters, J
Beckx, S
机构：
[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
[2] Univ Ghent, IMEC, B-9000 Ghent, Belgium
[3] IMEC Vzw, Silicon Proc Technol Div, B-3001 Heverlee, Belgium
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 20期
关键词：
D O I：
10.1049/el:20046206
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An effective design principle has been applied to photonic crystal waveguide bends fabricated in silicon-on-insulator material using deep UV lithography resulting in a large increase in the low-loss bandwidth of the bends. Furthermore, it is experimentally demonstrated that the absolute bandwidth range can be adjusted in a post-fabrication thermal oxidation process.
引用
收藏
页码：1263 / 1265
页数：3
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