Bandwidth engineering of photonic crystal waveguide bends

被引：20

作者：

Borel, PI

Frandsen, LH

Harpoth, A

Leon, JB

Liu, H

Kristensen, M

Bogaerts, W

Dumon, P

Baets, R

Wiaux, V

Wouters, J

Beckx, S

机构：

[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark

[2] Univ Ghent, IMEC, B-9000 Ghent, Belgium

[3] IMEC Vzw, Silicon Proc Technol Div, B-3001 Heverlee, Belgium

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 20期

关键词：

D O I：

10.1049/el:20046206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An effective design principle has been applied to photonic crystal waveguide bends fabricated in silicon-on-insulator material using deep UV lithography resulting in a large increase in the low-loss bandwidth of the bends. Furthermore, it is experimentally demonstrated that the absolute bandwidth range can be adjusted in a post-fabrication thermal oxidation process.

引用

页码：1263 / 1265

页数：3

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