Efficient 3D Monte Carlo Simulation of Orientation and Stress Effects in FinFETs

被引：0

作者：

Bufler, F. M. ^{[1
,2
]}

Heinz, F. O. ^{[2
]}

Smith, L. ^{[3
]}

机构：

[1] Swiss Fed Inst Technol, Inst Integrierte Syst, Gloriastr 35, CH-8092 Zurich, Switzerland

[2] Synopsys Schweiz GmbH, CH-8050 Zurich, Switzerland

[3] Synopsys Inc, Mountain View, CA 94043 USA

来源：

2013 18TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2013) | 2013年

关键词：

TRANSPORT; MOBILITY;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The stress and orientation dependence of FinFET performance is studied by parallelized 3D Monte Carlo (MC) device simulation. The long-channel mobility for holes in devices with < 110 >/< 110 > sidewall/channel orientation was found to double relative to the < 100 >/< 100 > configuration; electron mobility decreased by 20%. This agrees with recent measurements. In 15nm-FinFETs quasi-ballistic velocity overshoot is strongly enhanced by mechanical stress, leading to more than 10% increase in the on-current (ION). The wallclock time for computing ION with about one percent statistical error is less than ten minutes with 16 threads making MC viable for standard TCAD applications.

引用

页码：172 / 175

页数：4

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