Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

被引：20
|
作者：
Wilson, M. J. [1 ]
Zhu, M. [1 ]
Myers, R. C. [2 ]
Awschalom, D. D. [2 ]
Schiffer, P. [1 ]
Samarth, N. [1 ]
机构：
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
来源：
PHYSICAL REVIEW B | 2010年 / 81卷 / 04期
基金：
美国国家科学基金会;
关键词：
BIQUADRATIC EXCHANGE; ORIGIN; BIAS;
D O I：
10.1103/PhysRevB.81.045319
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (Ga(1-x)Mn(x)As) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/Ga(1-x)Mn(x)As bilayers accounts for the variation in the exchange-bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/Ga(1-x)Mn(x)As trilayers and study the dependence of the exchange-bias field on the thickness of the spacer layer.
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收藏
页数：6
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