13.2 nm Table-Top Inspection Microscope for Extreme Ultraviolet Lithography Mask Defect Characterization

被引：0

作者：

Brizuela, Fernando ^{[1
]}

Wang, Yong ^{[1
]}

Brewer, Courtney A. ^{[1
]}

Pedaci, Francesco ^{[1
]}

Chao, Weilun ^{[2
]}

Anderson, Erik H. ^{[2
]}

Liu, Yanwei ^{[2
]}

Goldberg, Kenneth A. ^{[2
]}

Naulleau, Patrick ^{[2
]}

Wachulak, Przemyslaw ^{[1
]}

Marconi, Mario C. ^{[1
]}

Attwood, David T. ^{[2
]}

Rocca, Jorge J. ^{[1
]}

Menoni, Carmen S. ^{[1
]}

机构：

[1] Colorado State Univ, NSF ERC Extreme Ultraviolet Sci & Technol, Ft Collins, CO 80523 USA

[2] Lawrence Berkeley Natl Lab, Ctr Xray Opt, Berkeley, CA 94720 USA

来源：

2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | 2009年

关键词：

LASER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a reflection microscope that operates at 13.2-nm wavelength with a spatial resolution of 55 +/- 3 nm. The microscope uses a table-top EUV laser to acquire images of photolithography masks in 20 seconds. (C) 2009 Optical Society of America

引用

页码：2458 / +

页数：2

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