Growth of crack-free and high-quality AlGaN with high Al content using epitaxial AlN(0001) films on sapphire

被引：0
|
作者：
Kida, Y
Shibata, T
Naoi, H
Miyake, H
Hiramatsu, K
Tanaka, M
机构：
[1] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan
[2] NGK Insulators Ltd, Mizuho Ku, Nagoya, Aichi 4678530, Japan
[3] Mie Univ, Satellite Venture Business Lab, Tsu, Mie 5148507, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2002年 / 194卷 / 02期
关键词：
D O I：
10.1002/1521-396X(200212)194:2<498::AID-PSSA498>3.0.CO;2-K
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-quality AlGaN with high Al content was grown on high-quality epitaxial AIN film on sapphire (0001) by low-pressure metal organic vapour phase epitaxy (LP-MOVPE). The obtained AlxGa1-xN (0.2 < x < 0.8) thicker than 0.9 mum had atomically smooth surface without any cracks. Full width at half maximum (FWHM) values of X-ray rocking curve (XRC) from the AlGaN were less than 200 arcsec for (0002) diffraction. It is considered that in-plane compressive stress in the AlGaN due to larger in-plane lattice constant of the AlGaN than that of the underlying AIN plays an important role in restraining generation of cracks.
引用
收藏
页码：498 / 501
页数：4
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