Interdiffusion effect on quantum-well structures grown on GaSb substrate

被引：8
|
作者：
Wang, Y.
Djie, H. S.
Ooi, B. S.
Rotella, P.
Dowd, P.
Aimez, V.
Cao, Y.
Zhang, Y. H.
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Sinclair Lab, Ctr Opt Technol, Bethlehem, PA 18015 USA
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[3] Univ Sherbrooke, Dept Genie Elect & Genie Informat, Sherbrooke, PQ J1K 2R1, Canada
[4] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[5] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 10期
基金：
美国安德鲁·梅隆基金会;
关键词：
quantum-well; interdiffusion; intermixing; GaSb;
D O I：
10.1016/j.tsf.2006.07.099
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have modeled the effect of compositional interdiffusion on the optical properties of GaSb/AlGaSb and InGaAsSb/AlGaAsSb quantum-well structures grown on GaSb substrate. Blue shifts of emission wavelength as large as 270 nm and 700 nm are predicted from a 6 nm wide interdiffused GaSb/AlGaSb quantum-well for a diffusion length of 3 nm, and from a 10 nm wide interdiffused InGaAsSb/AlGaAsSb quantum-well for a diffusion length of 5 nm, respectively. The effects of the as-grown quantum-well width and applied electric field on the emission wavelength and their relationship to the interdiffusion are also investigated. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4352 / 4355
页数：4
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