Growth pressure dependence of residual strain and threading dislocations in the GaN layer

被引：4

作者：

Lee, SN ^{[1
]}

Son, JK ^{[1
]}

Paek, HS ^{[1
]}

Sakong, T ^{[1
]}

Lee, W ^{[1
]}

Kim, KH ^{[1
]}

Kim, SS ^{[1
]}

Lee, YJ ^{[1
]}

Noh, DY ^{[1
]}

Yoon, E ^{[1
]}

Nam, OH ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200405007

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the generation of threading dislocations (TDs) and the relaxation of the compressive strain in the GaN/sapphire (0001) grown by metalorganic chemical vapor deposition. With decreasing the growth pressure, the a-axis lattice constant of GaN film and the width of the (002) and the (101) rocking curve increases. This indicates that the density of TDs in GaN epilayers increases with the lattice constant a of GaN film. The fact that the width of the (101) rocking curves increases much more than that of the (002) rocking curve indicates that the residual strain in GaN on sapphire reduces mainly by generating the edge-type TDs.(C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2458 / 2461

页数：4

共 50 条

[21] Intrinsic electronic structure of threading dislocations in GaN
Arslan, I
Browning, ND
PHYSICAL REVIEW B, 2002, 65 (07) : 1 - 10
[22] The effects of the threading dislocations on the qualities in undoped GaN
Kim, KS
Yang, GM
Kim, JH
Lee, KJ
Oh, CS
Lim, DH
Hong, CH
Lim, KY
Lee, HJ
Byun, DJ
Yoshikawa, A
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S409 - S414
[23] Threading dislocations and optical properties of GaN and GaInN
Miyajima, T
Hino, T
Tomiya, S
Yanashima, K
Nakajima, H
Araki, T
Nanishi, Y
Satake, A
Masumoto, Y
Akimoto, K
Kobayashi, T
Ikeda, M
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (02): : 395 - 402
[24] The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer
Meshi, L.
Cherns, D.
Griffiths, I.
Khongphetsak, S.
Gott, A.
Liu, C.
Denchitcharoen, S.
Shields, P.
Wang, W.
Campion, R.
Novikov, S.
Foxon, T.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1645 - +
[25] Reduction of threading dislocations in AlGaN/AlN/SiC epitaxial layers by controlled strain with (AlN/GaN) multibuffer-layer structure
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakanno-machi, Hachioji, Tokyo 192-0015, Japan
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 6 A (3301-3304):
[26] Characterization of threading dislocations in GaN epitaxial layers
Hino, T
Tomiya, S
Miyajima, T
Yanashima, K
Hashimoto, S
Ikeda, M
APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3421 - 3423
[27] Reduction of threading dislocations in AlGaN/AIN/SiC epitaxial layers by controlled strain with (AIN/GaN) multibuffer-layer structure
Murakawa, Kouichi
Niikura, Eiichirou
Hasegawa, Fumio
Kawanishi, Hideo
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (6A): : 3301 - 3304
[28] The effect of coalescence on threading dislocations in GaN films
Liu, Yun
Zhang, Jia
SCRIPTA MATERIALIA, 2010, 63 (01) : 109 - 112
[29] Evidence for moving of threading dislocations during the VPE growth in GaN thin layers
Kuwano, Noriyuki
Miyake, Hideto
Hiramatsu, Kazumasa
Amano, Hiroshi
Akasaki, Isamu
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 2011, 8 (05): : 1487 - 1490
[30] Influence of surface steps on glide of threading dislocations during layer growth
Hoagland, RG
Hirth, JP
Misra, A
Mitlin, D
APPLIED PHYSICS LETTERS, 2004, 84 (25) : 5136 - 5138

← 1 2 3 4 5 →