Monte Carlo simulation of ion implantation in silicon-germanium alloys

We have extended our Monte Carlo ion implantation simulator for Si1-xGex targets in order to analyze the applicability for advanced CMOS devices. The penetration depth of ion implanted dopants in relaxed SiGe is significantly reduced compared to pure silicon due to the larger nuclear and electronic stopping power. The successful calibration for the simulation of arsenic and boron implantations in Si1-xGex with different germanium fraction x is demonstrated by comparing the predicted doping profiles with SIMS measurements. A shift towards shallower profiles with increasing germanium content was found in a non-linear manner. Finally, the simulation result of source/drain implants for a MOSFET structure on a SiGe substrate is presented.