40 GBd 16QAM Signaling at 160 Gb/s in a Silicon-Organic Hybrid Modulator

被引:50
|
作者
Lauermann, Matthias [1 ]
Wolf, Stefan [1 ]
Schindler, Philipp C. [2 ]
Palmer, Robert [2 ]
Koeber, Sebastian [2 ]
Korn, Dietmar [1 ]
Alloatti, Luca [2 ]
Wahlbrink, Thorsten [3 ]
Bolten, Jens [3 ]
Waldow, Michael [3 ]
Koenigsmann, Michael [4 ]
Kohler, Matthias [4 ]
Malsam, Dimitri [4 ]
Elder, Delwin L. [5 ]
Johnston, Peter V. [5 ]
Phillips-Sylvain, Nathaniel [5 ]
Sullivan, Philip A. [6 ]
Dalton, Larry R. [5 ]
Leuthold, Juerg [2 ]
Freude, Wolfgang [1 ,7 ]
Koos, Christian [1 ,7 ]
机构
[1] Karlsruhe Inst Technol, Inst Photon & Quantum Elect, D-76131 Karlsruhe, Germany
[2] Karlsruhe Inst Technol, D-76131 Karlsruhe, Germany
[3] AMO GmbH, D-52074 Aachen, Germany
[4] Keysight Technol, D-71034 Boblingen, Germany
[5] Univ Washington, Seattle, WA 98195 USA
[6] Montana State Univ, Bozeman, MT 59717 USA
[7] Karlsruhe Inst Technol, Inst Microstruct Technol, D-76131 Karlsruhe, Germany
基金
美国国家科学基金会; 欧盟第七框架计划; 欧洲研究理事会;
关键词
Electro-optic modulators; nonlinear optical devices; photonic integrated circuits; OPTICAL MODULATION; HIGH-SPEED; EFFICIENCY;
D O I
10.1109/JLT.2015.2394211
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate for the first time generation of 16-state quadrature amplitude modulation (16QAM) signals at a symbol rate of 40 GBd using silicon-based modulators. Our devices exploit silicon-organic hybrid integration, which combines silicon-on-insulator slot waveguides with electro-optic cladding materials to realize highly efficient phase shifters. The devices enable 16QAM signaling and quadrature phase shift keying at symbol rates of 40 GBd and 45 GBd, respectively, leading to line rates of up to 160 Gb/s on a single wavelength and in a single polarization. This is the highest value demonstrated by a silicon-based device up to now. The energy consumption for 16 QAM signaling amounts to less than 120 fJ/bit-one order of magnitude below that of conventional silicon photonic 16QAM modulators.
引用
收藏
页码:1210 / 1216
页数:7
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