Oxygen incorporation into MBE-grown AlGaAs layers

被引：0

作者：

Naritsuka, S ^{[1
]}

Kobayashi, O ^{[1
]}

Mitsuda, K ^{[1
]}

Maruyama, T ^{[1
]}

Nishinaga, T ^{[1
]}

机构：

[1] Meijo Univ, Tenpaku Ku, Nagoya, Aichi 4688502, Japan

来源：

PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2003年 / 744卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The incorporation mechanism of oxygen into MBE-grown AlGaAs layers was systematically studied by changing the growth temperature and AlAs mole fraction. It was found that segregation of oxygen atoms strongly influences oxygen incorporation. By taking into account the surface segregation of oxygen, all of the particular characteristics observed in the oxygen incorporation into MBE-grown AlGaAs layers can be explained including a peak and a dip formation in the profile. Oxygen atoms accumulate on the surface of the substrate due to surface segregation and the number multiplied by the coefficient of surface segregation determines the oxygen incorporation.

引用

页码：445 / 449

页数：5

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