Mechanism of GeH4 dissociation on Si(111)-(7x7)

被引：2
|
作者：
Braun, J [1 ]
Rauscher, H [1 ]
Behm, RJ [1 ]
机构：
[1] Univ Ulm, Abt Oberflachenchem & Katalyse, D-89069 Ulm, Germany
来源：
SURFACE SCIENCE | 2003年 / 531卷 / 03期
关键词：
silicon; hydrides; chemisorption; sticking; scanning tunneling microscopy; X-ray pbotoelectron spectroscopy;
D O I：
10.1016/S0039-6028(03)00513-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Results of an STM study of dissociative GeH4 adsorption on Si(1 1 1)-(7 x 7) at 300 K show that GeH4 adsorbs under scission of two Ge-H bonds according to GeH4(g) + 4db --> GeH2(ad) + 2H(ad). GeH2 binds to two adatom dangling bonds in a bridged configuration, while the two released hydrogen atoms saturate two additional dangling bonds. The GeH4 sticking coefficient under these conditions is 1.2 x 10(-6), one order of magnitude smaller than for SiH4. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：265 / 271
页数：7
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