共 50 条
- [31] Pseudomorphic InxGa1-xAs/InyAl1-yAs high electron mobility transistor structures grown by solid source molecular beam epitaxy ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 25 - 28
- [34] Lineshape analysis of electron cyclotron resonance in lnxGa1-xAs/InyAl1-yAs heterostructures PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 230 - 232
- [37] Well surface roughness and fault density effects on the Hall mobility of InxGa1-xAs/InyAl1-yAs/InP high electron mobility transistors Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (05):
- [40] Well surface roughness and fault density effects on the Hall mobility of InxGa1-xAs/InyAl1-yAs/InP high electron mobility transistors JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (05): : 1715 - 1723