Observation of a large spin-orbit interaction in photoexcited InxGa1-xAs/InyAl1-yAs heterostructures

被引:0
|
作者
Fujii, K [1 ]
Morikami, Y
Ohyama, T
Gozu, S
Yamada, S
机构
[1] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
[2] RIKEN, Wako, Saitama 3510198, Japan
[3] JAIST Hokuriku, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan
来源
JOURNAL OF SUPERCONDUCTIVITY | 2003年 / 16卷 / 02期
关键词
cyclotron resonance; far-infrared absorption; zero-field spin splitting; photoexcitation;
D O I
10.1023/A:1023639520045
中图分类号
O59 [应用物理学];
学科分类号
摘要
Far-infrared magneto-optical absorption measurements of photoexcited InGaAs/InAlAs heterostructures are carried out. The resonance peak positions of cyclotron resonance due to spin-up and -down electrons can be determined from modulated absorption signals quantitatively. The photopulse excitation by band gap light changes the resonance positions. The amplitude of the spin splitting is found to depend on the excitation intensity and delay time. The change in the spin splitting energy is dominated by the modulation of confinement potential by photoexcitation.
引用
收藏
页码:469 / 472
页数:4
相关论文
共 50 条
  • [31] Pseudomorphic InxGa1-xAs/InyAl1-yAs high electron mobility transistor structures grown by solid source molecular beam epitaxy
    Zheng, HQ
    Radahakrishnan, K
    Yoon, SF
    Ng, GI
    ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 25 - 28
  • [32] OPTIMAL EPILAYER THICKNESS FOR INXGA1-XAS AND INYAL1-YAS COMPOSITION MEASUREMENT BY HIGH-RESOLUTION X-RAY-DIFFRACTION
    BENNETT, BR
    DELALAMO, JA
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8304 - 8308
  • [33] Atomic arrangements of a CuAu-I type ordered structure in strained InxGa1-xAs/InyAl1-yAs multiple quantum wells
    Lee, DU
    Jin, JY
    Yun, TY
    Kim, TW
    Lee, HS
    Kwon, MS
    Lee, JY
    JOURNAL OF MATERIALS SCIENCE, 2005, 40 (14) : 3843 - 3846
  • [34] Lineshape analysis of electron cyclotron resonance in lnxGa1-xAs/InyAl1-yAs heterostructures
    Fujii, K
    Morikami, Y
    Ohyama, T
    Gozu, S
    Yamada, S
    PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 230 - 232
  • [35] Very high electron mobilities at low temperatures in InxGa1-xAs/InyAl1-yAs HEMTs grown lattice-mismatched on GaAs substrates
    Gozu, S
    Tsuboki, K
    Hayashi, M
    Hong, CL
    Yamada, S
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 749 - 752
  • [36] Enhancement of electron transfer efficiency of the pseudomorphic InxGa1-xAs/InyAl1-yAs asymmetric step quantum well due to delta modulation doping
    Kim, TW
    Lee, DU
    MATERIALS CHEMISTRY AND PHYSICS, 2004, 83 (01) : 178 - 183
  • [37] Well surface roughness and fault density effects on the Hall mobility of InxGa1-xAs/InyAl1-yAs/InP high electron mobility transistors
    Peiro, F.
    Ferrer, J.C.
    Cornet, A.
    Morante, J.R.
    Beck, M.
    Py, M.A.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (05):
  • [38] Electronic parameters and electronic structures in modulation-doped highly strained InxGa1-xAs/InyAl1-yAs coupled double quantum wells
    Kim, TW
    Choo, DC
    Yoo, KH
    Meining, CJ
    McCombe, BD
    SOLID STATE COMMUNICATIONS, 2004, 129 (08) : 533 - 537
  • [39] Existence of a CuAu-I-type ordered structure in lattice-mismatched InxGa1-xAs/InyAl1-yAs multiple quantum wells
    Kim, TW
    Lee, DU
    Lee, HS
    Lee, JY
    Kim, MD
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (04) : 2503 - 2505
  • [40] Well surface roughness and fault density effects on the Hall mobility of InxGa1-xAs/InyAl1-yAs/InP high electron mobility transistors
    Peiro, F
    Ferrer, JC
    Cornet, A
    Morante, JR
    Beck, M
    Py, MA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (05): : 1715 - 1723