Temperature dependence of ESD charging in RF MEMS capacitive switch

被引：0

作者：

Ruan, J. ^{[1
]}

Papaioannou, G. J. ^{[1
]}

Nolhier, N. ^{[1
]}

Tremouilles, D. ^{[1
]}

Coccetti, F. ^{[1
]}

Plana, R. ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

来源：

2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009) | 2009年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The paper presents analyses of the dielectric charging in RF-MEMS devices that have been submitted to electrostatic discharge (ESD) stress. A wafer level Human Body Model (HBM) tester has been used to generate discharge signals. The investigation intends to understand the failure mechanism and the charging mechanism in capacitive RF-MEMS due to ESD. The experiments were done on MEMS and also on Metal-Insulator-Metal (MIM) devices, fabricated on the same wafer in order to get insight on failure modes and charging models. Furthermore, temperature ranges from 300 K to 330 K allows the understanding of physical mechanisms that may be responsible for the device's reliability.

引用

页码：403 / 406

页数：4

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