Gaussian Pulse Characterization of RF Power Amplifiers

被引：9

作者：

Cappello, Tommaso ^{[1
]}

Popovic, Zoya ^{[2
]}

Morris, Kevin ^{[1
]}

Cappello, Angelo ^{[3
]}

机构：

[1] Univ Bristol, Elect & Elect Engn Dept, Bristol BS8 1UB, Avon, England

[2] Univ Colorado, ECEE Dept, Boulder, CO 80309 USA

[3] Univ Bologna, DEI Dept, I-40126 Bologna, Italy

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2021年 / 31卷 / 04期

关键词：

Gallium nitride; memory effects; nonlinear characterization; power amplifier (PA); RF measurements; trapping effects;

D O I：

10.1109/LMWC.2021.3054049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a new RF power amplifier characterization technique based on a Gaussian pulse, which is shown to approximate the envelope of a multicarrier signal with 0.5% error around the peaks. The standard deviation of the Gaussian pulses is inversely proportional to the I/Q signal bandwidth. This test signal is shown to accurately capture nonlinear memory effects that result in gain dispersion after the peak power is reached. As an example, it is shown that the gain amplitude and phase can vary up to 2.3 dB and 6 degrees for a 10-W 3.75-GHz GaN power-amplifier evaluation board, depending on the I/Q signal bandwidth and peak power level.

引用

页码：417 / 420

页数：4

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