High Frequency LiNbO3 Bulk Wave Resonator

被引：0

作者：

Gorisse, Marie ^{[1
]}

Dours, Lyvia ^{[1
]}

Perreau, Pierre ^{[1
]}

Ravix, Auralie ^{[1
]}

Lefebvre, Romain ^{[1
]}

Castellan, Gael ^{[1
]}

Maeder-Pachurka, Catherine ^{[1
]}

Bousquet, Marie ^{[1
]}

Reinhardt, Alexandre ^{[1
]}

Bauder, Ruediger ^{[2
]}

Timme, Hans-Joerg ^{[2
]}

Friedrich, Hans-Peter ^{[2
]}

机构：

[1] Univ Grenoble Alpes, CEA, LETI, MINATEC Campus, Grenoble, France

[2] Infineon Technol AG, Neubiberg, Germany

来源：

PROCEEDINGS OF THE 2019 JOINT CONFERENCE OF THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND EUROPEAN FREQUENCY AND TIME FORUM (EFTF-IFCS 2019) | 2019年

关键词：

FBAR; lithium niobate; Smart Cut (TM); thin films;

D O I：

10.1109/fcs.2019.8856017

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Bulk Acoustic Wave Resonators made of lithium niobate thin films obtained by layer transfer techniques relied so far only on full sheet buried electrodes, what is impractical in vue of proper filter implementations. In this work, we introduced patterned bottom electrodes and a sacrificial layer cavity along with a Smart Cut (TM) process. We demonstrate Film Bulk Acoustic Resonators (FBAR) with resonance frequencies in the 2.4 GHz range, electromechanical coupling factors in excess of 39 % and quality factors above 250. This paves the way for introducing high piezoelectric coupling factor monocrystalline materials inside thin film BAW devices.

引用

页数：2

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