High-Q whispering gallery mode germanium microresonators at 8 um

被引:0
|
作者
Rena, Dingding [1 ,2 ]
Benirschke, David [1 ]
Shin, Jae Ho [1 ]
Burghoff, David [1 ]
机构
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
[2] Norwegian Univ Sci & Technol NTNU, Dept Elect Syst, Trondheim, Norway
关键词
Ge; microresonator; longwave infrared; non-epitaxy; WAVE-GUIDES; SILICON; SPECTROSCOPY; PHOTONICS;
D O I
10.1117/12.2610062
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Achieving a high-quality (Q) factor for microresonators at a longer wavelength, e.g. longwave infrared (LWIR) with a wavelength from 8 to 14 um, will trigger new development in integrated non-linear optics and sensing on a chip. Although there are both powerful integrated light sources like solid-state quantum cascade lasers (QCLs) and strong driving force from chip-based sensing applications in the LWIR atmospheric transparent window,(1, 2) the Q factors of the microresonators are only several thousand, due to limited choices of low-loss materials and complicated fabrication procedures.(3) Here, we report on the realization of a germanium (Ge) whispering gallery mode microresonator from a facile non-epitaxy fabrication process of high-quality Ge material with an ultra-smooth surface. By coupling the output of a QCL at 7.8 um into a partially suspended Ge on glass waveguide, an intrinsic Q of 2.5x10(5) are reported.(4) Compared with the previous study, our work shows the importance and great promise of maintaining high-quality material for integrated photonics at LWIR.
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页数:7
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