Mid-IR room temperature operated GaSb-based lasers and laser arrays

被引：0
|
作者：
Belenky, G [1 ]
Kim, JG [1 ]
Shterengas, L [1 ]
Martinelli, RU [1 ]
机构：
[1] SUNY Stony Brook, Stony Brook, NY 11974 USA
来源：
2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2004年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Technology of GaSb-based type-I quantum-well lasers is considered. The role of quantum-well strain in determining device injection efficiency, differential gain and contribution of Auger recombination to threshold current is discussed.
引用
收藏
页码：553 / 554
页数：2
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