High-Speed InP/InGaAsSb DHBT on High-Thermal-Conductivity SiC Substrate

被引：26

作者：

Shiratori, Yuta ^{[1
]}

Hoshi, Takuya ^{[1
]}

Ida, Minoru ^{[1
]}

Higurashi, Eiji ^{[2
,3
]}

Matsuzaki, Hideaki ^{[1
]}

机构：

[1] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan

[2] Natl Inst Adv Ind Sci & Technol, Res Ctr Ubiquitous MEMS & Micro Engn, Tsukuba, Ibaraki 3058564, Japan

[3] Univ Tokyo, Sch Engn, Dept Precis Engn, Tokyo 1138656, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 06期

关键词：

Double heterojunction bipolar transistors (DHBTs); InP/InGaAsSb; Au subcollector; SiC substrate; wafer bonding; SIMULTANEOUS F(T); INP; TRANSISTORS; TECHNOLOGY; MANAGEMENT; F(MAX); BASE;

D O I：

10.1109/LED.2018.2829531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/InGaAsSb double heterojunction bipolar transistors (DHBTs) with an Au subcollector were fabricated on a SiC substrate by using a wafer bonding technique. The thermal resistance (R-th) of a fabricated DHBT with a 0.35 x 8.0 mu m emitter is 62% lower than that of a DHBT with the same epitaxial layer structure on an InP substrate. Thanks to the lower R-th, the DHBT operates at a collector current density (J(C)) of over 25mA/mu m(2) without any lowering of current gain. The DHBT exhibits a record f(t) of 695 GHz at J(C) of 21 mA/mu m(2) owing to the reduced emitter charging time by suppressing the Kirk effect.

引用

页码：807 / 810

页数：4

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