Influence of self heating in a BiCMOS on SOI technology

被引：6

作者：

Haralson, E ^{[1
]}

Malm, BG ^{[1
]}

Johansson, T ^{[1
]}

Östling, M ^{[1
]}

机构：

[1] Royal Inst Technol, KTH, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden

来源：

ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2004年

关键词：

D O I：

10.1109/ESSDER.2004.1356558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self heating in a 0.25mum BiCMOS technology with different isolation structures is characterized. Thermal resistance values for single- and multiple-emitter devices are extracted and reported. The dependence of the thermal resistance on the emitter aspect ratio is critical to take into consideration when determining the isolation scheme for devices. 2-D electro-thermal simulations are performed and compared to experimental results. The impact of metallization on the self-heating in the device is examined through simulations.

引用

页码：337 / 340

页数：4

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