Influence of self heating in a BiCMOS on SOI technology

被引：6
|
作者：
Haralson, E [1 ]
Malm, BG [1 ]
Johansson, T [1 ]
Östling, M [1 ]
机构：
[1] Royal Inst Technol, KTH, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden
来源：
ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2004年
关键词：
D O I：
10.1109/ESSDER.2004.1356558
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self heating in a 0.25mum BiCMOS technology with different isolation structures is characterized. Thermal resistance values for single- and multiple-emitter devices are extracted and reported. The dependence of the thermal resistance on the emitter aspect ratio is critical to take into consideration when determining the isolation scheme for devices. 2-D electro-thermal simulations are performed and compared to experimental results. The impact of metallization on the self-heating in the device is examined through simulations.
引用
收藏
页码：337 / 340
页数：4
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