Simulations of nonradiative processes in semiconductor nanocrystals

被引:18
|
作者
Jasrasaria, Dipti [1 ]
Weinberg, Daniel [1 ,2 ]
Philbin, John P. [3 ]
Rabani, Eran [1 ,2 ,4 ]
机构
[1] Univ Calif, Dept Chem, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
[3] Harvard Univ, Harvard John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[4] Tel Aviv Univ, Raymond & Beverly Sackler Ctr Computat Mol & Mat S, IL-69978 Tel Aviv, Israel
来源
JOURNAL OF CHEMICAL PHYSICS | 2022年 / 157卷 / 02期
关键词
CDSE QUANTUM DOTS; BIEXCITON AUGER RECOMBINATION; ELECTRON-HOLE EXCITATIONS; SIZE DEPENDENCE; PSEUDOPOTENTIAL CALCULATIONS; CARRIER RELAXATION; SHELL-THICKNESS; MULTIEXCITON GENERATION; FILTER-DIAGONALIZATION; TEMPERATURE-DEPENDENCE;
D O I
10.1063/5.0095897
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The description of carrier dynamics in spatially confined semiconductor nanocrystals (NCs), which have enhanced electron-hole and exciton-phonon interactions, is a great challenge for modern computational science. These NCs typically contain thousands of atoms and tens of thousands of valence electrons with discrete spectra at low excitation energies, similar to atoms and molecules, that converge to the continuum bulk limit at higher energies. Computational methods developed for molecules are limited to very small nanoclusters, and methods for bulk systems with periodic boundary conditions are not suitable due to the lack of translational symmetry in NCs. This perspective focuses on our recent efforts in developing a unified atomistic model based on the semiempirical pseudopotential approach, which is parameterized by first-principle calculations and validated against experimental measurements, to describe two of the main nonradiative relaxation processes of quantum confined excitons: exciton cooling and Auger recombination. We focus on the description of both electron-hole and exciton-phonon interactions in our approach and discuss the role of size, shape, and interfacing on the electronic properties and dynamics for II-VI and III-V semiconductor NCs.
引用
收藏
页数:16
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