Quantum dot gain-lever laser diode

被引：3
|
作者：
Naderi, N. A. [1 ]
Li, Y. [1 ]
Dziak, C. [1 ]
Xin, Y. C. [1 ]
Kovanis, V. [2 ]
Lester, L. F. [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, 1313 Goddard SE, Albuquerque, NM 87106 USA
[2] US Air Force, Res Lab SNDP, Rome, NY 13441 USA
来源：
2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2006年
关键词：
D O I：
10.1109/LEOS.2006.278832
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gain lever effect in quantum dot lasers is studied for the first time. A maximum enhancement of 8-dB in the modulation efficiency is observed by using a two-section configuration.
引用
收藏
页码：52 / +
页数：2
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