3D quantum numerical simulation of single-event transients in multiple-gate nanowire MOSFETs

被引：30

作者：

Munteanu, D. ^{[1
]}

Autran, J. L.

Ferlet-Cavrois, V.

Paillet, P.

Baggio, J.

Castellani, K.

机构：

[1] CNRS, L2MP, UMR 6137, F-13384 Marseille 13, France

[2] IUF, Paris, France

[3] CEA, DAM DIF, F-91680 Bruyeres Le Chatel, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 04期

关键词：

Double-Gate (DG); Gate-All-Around (GAA); Multiple-Gate nanowire MOSFET; Omega-Gate (Q-Gate); quantum-mechanical effects; 3D quantum simulation; Triple-Gate (Tri-gate);

D O I：

10.1109/TNS.2007.892284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of quantum confinement effects on the transient response of 32 nm Multiple-Gate nanowire MOSFETs to heavy ion irradiation is investigated using 3D quantum numerical simulation. The drain current transient induced by an ion strike and the bipolar amplification of Double-Gate, Triple-Gate, Omega-Gate and Gate-All-Around architectures is simulated for the 2007, 2009 and 2011 ITRS Low Power technology nodes. The consequences of quantum-mechanical confinement on single-event transient immunity when devices are scaled down to 20 nm gate length and 5 mn thick silicon channel are then analyzed.

引用

页码：994 / 1001

页数：8

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