High performance Ge/Si avalanche photodiode

被引：0

作者：

Huang, Mengyuan ^{[1
]}

Cai, Pengfei ^{[1
]}

Wang, Liangbo ^{[1
]}

Li, Su ^{[1
]}

Chen, Wang ^{[1
]}

Hong, Ching-yin ^{[1
]}

Zhang, Nai ^{[1
]}

Pan, Dong ^{[1
]}

机构：

[1] SiFoton Technol Co Ltd, 500 West Cummings Pk,Suite 3250, Woburn, MA 01801 USA

来源：

2015 PHOTONICS CONFERENCE (IPC) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review our recent development of germanium on silicon avalanche photodiodes (Ge/Si APDs), Our Ge/Si APDs, manufactured by a standard CMOS commercial foundry, satisfY the requirements of various optical communication systems from 10Gb/s to 25Gb/s.

引用

页数：2

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