Design and Realization of a 434 MHz, 200 Watts Solid-State Power Amplifier for a Microwave Hyperthermia System

被引：0

作者：

Kiatwarin, Pakawat ^{[1
]}

Chalermwisutkul, Suramate ^{[1
]}

机构：

[1] King Monkuts Univ Technol North Bangkok, Sirindhorn Int Thai German Grad Sch Engn TGGS, 1518 Pibulsongkram Rd, Bangkok, Thailand

来源：

CIRCUITS, SYSTEM AND SIMULATION | 2011年 / 7卷

关键词：

RF power amplifier; class-B operation; microwave hyperthermia system;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a class-B power amplifier (PA) for a microwave hyperthermia system. The power amplifier has been designed and fabricated for the operating frequency of 434 MHz with a Silicon based LDMOS field effect transistor as the main power device. During the design process, source-pull and load-pull techniques were used for determining the optimal impedance in order to obtain maximum Power Added Efficiency (PAE) whereas the output power should be maintained higher than 53 dBm. The average power-handling capability (APHC) of the microstrip lines in the PA circuit and proper heat sink for the proposed power amplifier are taken into account and presented. As a result, our power amplifier achieves a peak PAE of 45.8% with a gain of 18.9 dB and typical output power of 53 dBm (with 34 dBm input power).

引用

页码：183 / 187

页数：5

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