Optical absorption of large band-gap SbxBi1-xI3 alloys

被引：0

作者：

Persson, C ^{[1
]}

Ahuja, R ^{[1
]}

de Almeida, JS ^{[1
]}

Johansson, B ^{[1
]}

An, CY ^{[1
]}

Ferreira, FA ^{[1
]}

Dantas, NS ^{[1
]}

Pepe, I ^{[1
]}

da Silva, AF ^{[1
]}

机构：

[1] Uppsala Univ, Condensed Matter Theory Grp, Dept Phys, SE-75121 Uppsala, Sweden

来源：

PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2003年 / 744卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical properties of SbBiI3 alloys have been investigated experimentally by absorption measurements and theoretically by a full-potential augmented plane wave (FPLAPW) method within the generalized gradient approximation. The fundamental band-gap energy of these alloys changes from BiI3- to SbI3-like with increasing percentage of Sb content. The calculated band-gap energies as well as the optical absorption were found to be in a very good qualitatively agreement with the experimental results. We present calculated density-of-states as well as the dielectric functions for evaluation of future experiments.

引用

页码：295 / 300

页数：6

共 50 条

[41] OPTICAL BAND-GAP OF CDI2 POLYTYPES
BACEWICZ, R
PALOSZ, B
GIERLOTKA, S
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 130 (02): : K135 - K137
[42] OPTICAL BAND-GAP OF THE FILLED TETRAHEDRAL SEMICONDUCTOR LIZNN
KURIYAMA, K
KATO, T
TANAKA, T
PHYSICAL REVIEW B, 1994, 49 (07): : 4511 - 4513
[43] Optical Properties of Wide Band-Gap Semiconductor ZnMgSTe
Shiomi, Shoma
Arima, Kei
Kawai, Miho
Ohno, Hiroto
Iwahashi, Kazuma
Akaiwa, Kazuaki
Abe, Tomoki
Ichino, Kunio
Zairyo/Journal of the Society of Materials Science, Japan, 2024, 73 (10) : 774 - 777
[44] OPTICAL BAND-GAP OF THE ALPHA-MERCURIC IODIDE
DASILVA, AF
VEISSID, N
AN, CY
DESOUZA, JC
DASILVA, AVB
FARIAS, PC
DACRUZ, MTF
JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) : 5822 - 5823
[45] EFFECTS OF OPERATING TEMPERATURE ON OPTICAL-ABSORPTION COEFFICIENT AND OPTICAL BAND-GAP OF HYDROGENATED AMORPHOUS-SILICON
PARK, JS
HAN, MK
JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4456 - 4458
[46] OPTICAL HYSTERESIS AND INSTABILITIES INSIDE THE POLARITON BAND-GAP
MALYSHEV, V
JARQUE, EC
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1995, 12 (10) : 1868 - 1877
[47] Near band-gap optical nonlinearities and bistability in Cd1-xMnxTe
Kowalczyk, L
Koziarska-Glinka, B
Khoi, LV
Galazka, RR
Suchocki, A
OPTICAL MATERIALS, 2000, 14 (02) : 161 - 170
[48] OPTICAL BAND-GAP OF THE TERNARY SEMICONDUCTOR SI1-X-YGEXCY
SOREF, RA
JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) : 2470 - 2472
[49] Density of states, hybridization, and band-gap evolution in AlxGa1-xN alloys
Duda, LC
Stagarescu, CB
Downes, J
Smith, KE
Korakakis, D
Moustakas, TD
Guo, JH
Nordgren, J
PHYSICAL REVIEW B, 1998, 58 (04) : 1928 - 1933
[50] Band-gap discontinuity in semiconductor alloys with dissimilar wavefunction characters at the band edges
Cai, Xuefen
Wei, Su-Huai
Deak, Peter
Yang, Jingxiu
Zhang, Chen
Wang, Bin
Li, Shu-Shen
Deng, Hui-Xiong
PHYSICAL REVIEW B, 2024, 109 (23)

← 1 2 3 4 5 →