THE IMPACT OF DIELECTRIC MATERIAL AND TEMPERATURE ON DIELECTRIC CHARGING IN RF MEMS CAPACITIVE SWITCHES

The present work attempts to provide a better insight on the dielectric charging in RF-MEMS capacitive switches that constitutes a key issue limiting parameter of their commercialization. The dependence of the charging process on the nature of dielectric materials widely used in these devices, such as SiO2, Si3N4, AlN, Al2O3, Ta2O5, HfO2, which consist of covalent or ionic bonds and may exhibit piezoelectric properties is discussed taking into account the effect of deposition conditions and resulting material stoichiometry. Another key issue parameter that accelerates the charging and discharging processes by providing enough energy to trapped charges to be released and to dipoles to overcome potential barriers and randomize their orientation is the temperature will be investigated too. Finally, the effect of device structure will be also taken into account.