Dielectric strength of cross-linked thin-film poly(methyl methacrylate)

被引：0

作者：

Ilin, Alexey ^{[1
]}

Kovalenko, Alla ^{[1
]}

Frolov, Alexey ^{[2
]}

Labutov, Dmitry ^{[3
]}

机构：

[1] Kotelnikov IRE RAS, Lab Elect Proc Quantum Struct, Moscow, Russia

[2] Kotelnikov IRE RAS, Lab Low Dimens Struct, Moscow, Russia

[3] Moscow Inst Phys & Technol, Moscow, Russia

来源：

2021 IEEE INTERNATIONAL CONFERENCE ON MANIPULATION, MANUFACTURING AND MEASUREMENT ON THE NANOSCALE (3M-NANO) | 2021年

关键词：

PMMA; cross-linked; dielectric strength; breakdown voltage; thin film; EBL; lithography; PMMA;

D O I：

10.1109/3M-NANO49087.2021.9599759

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dielectric strength of thin-film cross-linked PMMA was studied. A series of samples was fabricated using EBL. The samples were two overlapping Pd electrodes separated by a layer of cross-linked PMMA. The cross-linking was obtained by high-dose electron-beam irradiation of PMMA thin-film. The size of the overlap was I xl pmt and the cross-linked PMMA layer thickness was 90 nm. The IV characteristics of the samples were obtained, and the breakdown voltage measured was 32.5 V to 46.6 V with mean value 39.2 V, and median 38.9 V. The calculated dielectric strength of the thin-film cross-linked PMMA was 3.6 MV/cm to 5.2 MV/cm, with mean value 4.4 MV/cm and median 4.3 MV/cm. Additionally, PMMA thin films shrinkage under cross-linking was measured.

引用

页码：449 / 452

页数：4

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