Z-Contrast STEM imaging and EELS of CdSe nanocrystals: Towards the analysis of individual nanocrystal surfaces

被引:0
|
作者
Kadavanich, AV [1 ]
Kippeny, T [1 ]
Erwin, M [1 ]
Rosenthal, SJ [1 ]
Pennycook, SJ [1 ]
机构
[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
来源
SEMICONDUCTOR QUANTUM DOTS | 2000年 / 571卷
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中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We have applied Atomic Number Contrast Scanning Transmission Electron Microscopy (Z-Contrast STEM) and STEM/EELS (Electron Energy Loss Spectroscopy) towards the study of colloidal CdSe semiconductor nanocrystals embedded in MEH-PPV polymer films. Z-Contrast images are direct projections of the atomic structure. Hence they can be interpreted without the need for sophisticated image simulation and the image intensity is a direct measure of the thickness of a nanocrystal. Our thickness measurements are in agreement with the predicted faceted shape of these nanocrystals. Our unique 1.3 Angstrom resolution STEM has successfully resolved the sublattice structure of these CdSe nanocrystals. In [010] projection (the polar axis in the image plane) we can distinguish Se atom columns from Cd columns. EELS measurements on individual nanocrystals indicate a significant amount (equivalent to 0.5-1 surface monolayers) of oxygen on the nanocrystals, despite processing in an inert atmosphere. Spatially resolved measurements at 7 Angstrom resolution suggest a surface oxide layer.
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页码:305 / 311
页数:7
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