Numerical simulations of light-extraction efficiencies of light-emitting diodes on micro and nanopatterned sapphire substrates

被引：8
|
作者：
Cui, Hao [1 ]
Park, Si-Hyun [1 ]
机构：
[1] Yeungnam Univ, Dept Elect Engn, Gyongsan 712749, South Korea
来源：
MICRO & NANO LETTERS | 2014年 / 9卷 / 12期
关键词：
2-DIMENSIONAL PHOTONIC CRYSTAL; LEDS; POWER; IMPROVEMENT; TEXTURE; DESIGN;
D O I：
10.1049/mnl.2014.0373
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Numerical simulations are performed to investigate the light-extraction efficiencies (LEEs) of gallium nitride-based light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs), using the three-dimensional finite-difference time-domain method. PSSs with hexagonal arrays of cone-shaped patterns were used, and the pitch of the pattern array, pattern fill factor and pattern height were varied from nanoscale to microscale. The relative LEE for each PSS-LED was calculated, and the geometrical parameters were analysed for optimised light extraction enhancement of the PSS-LEDs.
引用
收藏
页码：841 / 844
页数：4
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