Optimization of layer thickness of ZnO based perovskite solar cells using SCAPS 1D

被引:37
|
作者
Aseena, S. [1 ,3 ]
Abraham, Nelsa [1 ,3 ]
Babu, V. Suresh [2 ,3 ]
机构
[1] Govt Engn Coll, Barton Hill, Trivandrum, Kerala, India
[2] Govt Engn Coll, Wayanad, Kerala, India
[3] APJ Abdul Kalam Technol Univ, Thiruvananthapuram, Kerala, India
关键词
Perovskites; SCAPS; 1D; Optimization; Electron Transport layer; Hole Transport Layer;
D O I
10.1016/j.matpr.2020.09.077
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Perovskite solar cells are the emerging photovoltaic technology which showed great advancement in its performance during the recent years. The basic n-i-p planar heterojunction structure of perovskite solar cells have been designed and simulated using different software platforms. SCAPS 1D based design, simulation and optimization of perovskite solar cells using novel charge transport materials and perovskites have helped in the evaluation of efficiency and performance. There are various factors which affect the conversion efficiency and other electrical parameters of these solar cells. These are material parameters of the structural layers, defect density, charge recombination rates, thickness of different layers etc. Thickness of the charge transport layers and perovskite layers have an important impact on short circuit current density, open circuit voltage, fillfactor and efficiency of the solar cell. In this paper, SCAPS 1D based optimization of thickness of the charge transport layers such as the electron transport layer, hole transport layer and the perovskite absorber layer is being studied. The process of optimization of layer thickness involves fixing the thickness of two layers and varying the thickness of the third layer so as to obtain the maximum efficiency. The planar structure of perovskite solar cell used is ZnO Electron Transport Material/perovskite CH3NH3PbI3 absorber/Spiro Hole Transport Material/Au. (C) 2020 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology.
引用
收藏
页码:3432 / 3437
页数:6
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