Eu concentration dependence on structural and optical properties of Eu-doped GaN

被引：2
|
作者：
Bang, H
Morishima, S
Tsukamoto, T
Li, ZQ
Sawahata, J
Seo, J
Takiguchi, M
Bando, Y
Akimoto, K
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] NIMS, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[3] NIMS, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 12期
关键词：
D O I：
10.1002/pssb.200405027
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The structural and optical properties of europium-doped GaN were studied. The Eu-related luminescence was observed at 622 nm and originated from the intra-4f transition of the Eu3+ ion. The intensity of the luminescence increased as the Eu concentration increased up to about 3 at%, and then abruptly decreased. In-situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) were carried out to study this luminescence quenching, and it was discovered that there is a close relationship between the luminescence intensity at 622 nm and the structural properties. The cause of the concentration quenching is likely related to the polycrystalline growth as well as to the formation of EuN. (C) 2004 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2708 / 2712
页数：5
相关论文
共 50 条
  • [41] Synthesis and optical properties of undoped and Eu-doped ZnS nanoparticles
    Ashwini, K.
    Pandurangappa, C.
    Nagabhushana, B. M.
    PHYSICA SCRIPTA, 2012, 85 (06)
  • [42] Control of Eu luminescence centers by codoping of Mg and Si into Eu-doped GaN
    Lee, Dong-Gun
    Wakamatsu, Ryuta
    Koizumi, Atsushi
    Terai, Yoshikazu
    Fujiwara, Yasufumi
    Japanese Journal of Applied Physics, 2013, 52 (8 PART 2)
  • [43] Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN
    Lee, Dong-Gun
    Wakamatsu, Ryuta
    Koizumi, Atsushi
    Terai, Yoshikazu
    Fujiwara, Yasufumi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
  • [44] Radiation damage mechanisms for luminescence in Eu-doped GaN
    Tringe, J.W.
    Felter, T.E.
    Talley, C.E.
    Morse, J.D.
    Stevens, C.G.
    Castelaz, J.M.
    Wetzel, C.
    Journal of Applied Physics, 2007, 101 (05):
  • [45] Eu concentration dependence of photoluminescence and scintillation properties on Eu-doped Y3Al5O12 single crystals
    Kunikata, Toshiaki
    Watanabe, Kenichi
    Kantuptim, Prom
    Shiratori, Daiki
    Kato, Takumi
    Nakauchi, Daisuke
    Kawaguchi, Noriaki
    Yanagida, Takayuki
    RADIATION PHYSICS AND CHEMISTRY, 2024, 216
  • [46] Charge state of vacancy defects in Eu-doped GaN
    Mitchell, B.
    Hernandez, N.
    Lee, D.
    Koizumi, A.
    Fujiwara, Y.
    Dierolf, V.
    PHYSICAL REVIEW B, 2017, 96 (06)
  • [47] Magnetism of Eu-doped GaN modulations by spinodal nanodecomposition
    Masago, Akira
    Shinya, Hikari
    Fukushima, Tetsuya
    Sato, Kazunori
    Katayama-Yoshida, Hiroshi
    PHYSICAL REVIEW B, 2018, 98 (21)
  • [48] Luminescence and Excitation Mechanisms of Eu-Doped GaN Phosphors
    Jadwisienczak, Wojciech M.
    Ramadan, Saleem
    Thomas, Tiju
    Spencer, Michael G.
    Garces, Nelson Y.
    Glaser, Evan R.
    Wisniewski, Krzysztof
    RARE-EARTH DOPING OF ADVANCED MATERIALS FOR PHOTONIC APPLICATIONS, 2009, 1111 : 37 - +
  • [49] Radiation damage mechanisms for luminescence in Eu-doped GaN
    Tringe, J. W.
    Felter, T. E.
    Talley, C. E.
    Morse, J. D.
    Stevens, C. G.
    Castelaz, J. M.
    Wetzel, C.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
  • [50] Growth temperature dependence of EU-doped GaN grown by organometallic vapor phase epitaxy
    Nishikawa A.
    Kawasaki T.
    Furukawa N.
    Terai Y.
    Fujiwara Y.
    Zairyo/Journal of the Society of Materials Science, Japan, 2010, 59 (09) : 671 - 674
12345