Preparation and optical properties of higher manganese silicide, (Mn,Fe)Siγ, thin films

被引：4
|
作者：
Hayashi, Kei [1 ]
Ishii, Kentaro [1 ]
Kawasaki, Chihiro [1 ]
Honda, Ryosuke [1 ]
Miyazaki, Yuzuru [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
来源：
APPLIED SURFACE SCIENCE | 2018年 / 458卷
关键词：
Higher manganese silicide; Fe substitution; Electronic structure; Pulsed laser deposition; Epitaxial growth; Optical absorption; SEMICONDUCTING PROPERTIES; CRYSTAL-STRUCTURE;
D O I：
10.1016/j.apsusc.2018.07.141
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this article, the optical properties of thin films of higher manganese silicide (HMS) systems, MnSi gamma and (Mn,Fe) Si-gamma, were investigated. Band structure calculations were performed using the Mn11Si19 and (Mn31/44Fe13/ (44))(11)Si-19 crystal structure models of HMS to predict the conduction types and band gaps of MnSi gamma and Mn0.7Fe0.3Si gamma, respectively. Using a pulsed laser deposition method, p-type MnSi gamma and n-type Mn0.7Fe0.3Si gamma thin films with a-axis orientation were grown on R-sapphire substrates. The measured direct band gaps were 0.81(1) eV for the MnSi gamma thin film and 0.83(2) eV for the Mn0.7Fe0.3Si gamma thin film. These results demonstrate the potential of (Mn,Fe)Si-gamma-based near-infrared absorption solar cells.
引用
收藏
页码：700 / 704
页数：5
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